Si5857DU
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.058 at V GS = - 4.5 V
0.100 at V GS = - 2.5 V
I D (A) a
6
6
Q g (Typ.)
5.5 nC
? Halogen-free According to IEC 61249-2-21
Definition
? LITTLE FOOT ? Plus Power MOSFET
? New Thermally Enhanced PowerPAK ?
ChipFET ? Package
SCHOTTKY PRODUCT SUMMARY
- Small Footprint Area
V KA (V)
20
V F (V)
Diode Forward Voltage
0.375 at 1 A
I F (A) a
2
- Low On-Resistance
- Thin 0.8 mm Profile
? Compliant to RoHS Directive 2002/95/EC
PowerPAK ChipFET Dual
? ?
APPLICATIONS
1
Markin g Code
JA XXX
? Charging Switch for Portable Devices
- With Integrated Low V F Trench Schottky Diode
8
K
K
A
A
2
S
3
4
Lot Tracea b ility
and Date Code
Part # Code
S
K
m
3. 0
7
m
6
D
D
G
G
5
1. 8
mm
Bottom V ie w
Orderin g Information : Si5 8 57DU-T1-GE3 (Lead (P b )-free and Halogen-free)
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise not ed
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
T C = 25 °C
Symbol
V DS
V KA
V GS
Limit
- 20
20
± 12
6 a
Unit
V
Continuous Drain Current (T J = 150 °C) (MOSFET)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
6 a
- 5 b, c
- 4 b, c
Pulsed Drain Current (MOSFET)
I DM
- 20
A
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
T C = 25 °C
T A = 25 °C
T C = 25 °C
I S
I F
I FM
- 6 a
1.9 b, c
2
7
10.4
Maximum Power Dissipation (MOSFET)
T C = 70 °C
T A = 25 °C
P D
6.7
2.3 b, c
W
T A = 70 °C
T C = 25 °C
1.5 b, c
7.8
Maximum Power Dissipation (Schottky)
T C = 70 °C
T A = 25 °C
P D
5
2.1 b, c
W
T A = 70 °C
1.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature) d, e
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
T J , T stg
- 55 to 150
260
°C
www.vishay.com
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